for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 58 linear & power amplifiers - smt hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607 general description features functional diagram the hmc414ms8g & hmc414MS8GE are high effi- ciency gaas ingap heterojunction bipolar tran- sistor (hbt) mmic power ampli ers which operate between 2.2 and 2.8 ghz. the ampli er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved rf and thermal per- formance. with a minimum of external components, the ampli er provides 20 db of gain, +30 dbm of satu- rated power at 32% pae from a +5v supply voltage. the ampli er can also operate with a 3.6v supply. vpd can be used for full power down or rf output power/ current control. gain: 20 db saturated power: +30 dbm 32% pae supply voltage: +2.75v to +5v power down capability low external part count electrical speci cations, t a = +25 c, as a function of vs, vpd = 3.6v typical applications this ampli er is ideal for use as a power ampli er for 2.2 - 2.7 ghz applications: ? bluetooth ? mmds parameter vs = 3.6v vs = 5v min. typ. max. min. typ. max. units frequency range 2.2 - 2.8 2.2 - 2.8 ghz gain 17 20 25 17 20 25 db gain variation over temperature 0.03 0.04 0.03 0.04 db/ c input return loss 8 8 db output return loss 9 9 db output power for 1 db compression (p1db) 21 25 23 27 dbm saturated output power (psat) 27 30 dbm output third order intercept (ip3) 30 35 35 39 dbm noise figure 6.5 7.0 db supply current (icq) vpd = 0v / 3.6v 0.002 / 240 0.002 / 300 ma control current (ipd) vpd = 3.6v 7 7 ma switching speed ton, toff 45 45 ns
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 59 return loss, vs= 3.6v return loss, vs= 5v gain vs. temperature, vs= 3.6v gain vs. temperature, vs= 5v p1db vs. temperature, vs= 3.6v p1db vs. temperature, vs= 5v 0 5 10 15 20 25 30 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c gain (db) frequency (ghz) 0 5 10 15 20 25 30 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 2 2.2 2.4 2.6 2.8 3 s11 s22 return loss (db) frequency (ghz) -20 -16 -12 -8 -4 0 2 2.2 2.4 2.6 2.8 3 s11 s22 return loss (db) frequency (ghz) 0 4 8 12 16 20 24 28 32 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 32 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c p1db (dbm) frequency (ghz) hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 60 linear & power amplifiers - smt power compression@ 2.4 ghz, vs= 3.6v power compression@ 2.4 ghz, vs= 5v psat vs. temperature, vs= 3.6v psat vs. temperature, vs= 5v output ip3 vs. temperature, vs= 3.6v output ip3 vs. temperature, vs= 5v 0 4 8 12 16 20 24 28 32 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c psat (dbm) frequency (ghz) 0 4 8 12 16 20 24 28 32 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c psat (dbm) frequency (ghz) 0 6 12 18 24 30 36 -14 -9 -4 1 6 11 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 6 12 18 24 30 36 -14 -9 -4 1 6 11 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 12 17 22 27 32 37 42 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 12 17 22 27 32 37 42 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 61 noise figure vs. temperature, vs= 3.6v noise figure vs. temperature, vs= 5v reverse isolation vs. temperature, vs= 3.6v gain & power vs. supply voltage power down isolation, vs= 3.6v gain, power & quiescent supply current vs vpd@ 2.4 ghz -40 -30 -20 -10 0 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c isolation (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 2 2.2 2.4 2.6 2.8 3 isolation (db) frequency (ghz) 0 3 6 9 12 15 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c noise figure (db) frequency (ghz) 0 3 6 9 12 15 2 2.2 2.4 2.6 2.8 3 +25 c +85 c -40 c noise figure (db) frequency (ghz) 18 20 22 24 26 28 14 18 22 26 30 34 2.75 3.25 3.75 4.25 4.75 5.25 gain p1db psat gain db) p1db, psat (dbm) vcc supply voltage (vdc) 12 16 20 24 28 32 0 80 160 240 320 400 2 2.4 2.8 3.2 3.6 gain (db), p1db (dbm), psat (dbm) icq (ma) vpd (vdc) icq p1db psat gain hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 62 linear & power amplifiers - smt outline drawing absolute maximum ratings collector bias voltage (vcc) +5.5 vdc control voltage (vpd1, vpd2) +4.0 vdc rf input power (rfin)(vs = +5.0, vpd = +3.6 vdc) +17 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 27 mw/c above 85 c) 1.755 w thermal resistance (junction to ground paddle) 37 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c part number package body material lead finish msl rating package marking [3] hmc414ms8g low stress injection molded plastic sn/pb solder msl1 [1] h414 xxxx hmc414MS8GE rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h414 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607 notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 63 pin number function description interface schematic 1rfin this pin is ac coupled and matched to 50 ohms. 2nc not connected. 3, 4 rfout rf output and dc bias for the output stage. 5gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 6, 8 vpd1, vpd2 power control pin. for maximum power, this pin should be connected to 3.6v. for 5v operation, a dropping resistor is required. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 7vcc power supply voltage for the rst ampli er stage. an external bypass capacitor of 330 pf is required as shown in the application schematic. pin descriptions hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 64 linear & power amplifiers - smt evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 105006 [1] * for 5v operation on vctl line, select r1, r2 such that 3.6v is presented on pins 6 and 8. item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 2.7 pf capacitor, 0603 pkg. c2 100 pf capacitor, 0402 pkg. c3 - c6 330 pf capacitor, 0603 pkg. c7 2.2 f capacitor, tantalum l1 18nh inductor 0603 pkg. u1 hmc414ms8g / hmc414MS8GE ampli er pcb [2] 105074 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 65 application circuit * for 5v operation on vctl line, select r1, r2 such that 3.6v is presented on pins 6 and 8. tl1 tl2 tl3 impedance 50 ohm 50 ohm 50 ohm length 0.036 0.3 0.11 hmc414ms8g / 414MS8GE gaas ingap hbt mmic power amplifier, 2.2 - 2.8 ghz v04.0607
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